Non-isothermal crystallization kinetics of Se82−xTe18Gex (0 ≤ x ≤ 12) for memory applications

The current paper explains the kinetic variables of crystallization kinetics. Se 82− x Te 18 Ge x (0 ≤ x ≤ 12) amorphous glassy materials were synthesized by the melt quench technique. XRD, SEM, and EDX characterizations were done to analyze the structure and elemental composition of the prepared amorphous glassy alloys. DSC measurements were taken to study the phase transition of the amorphous glassy alloys under identical conditions. For the crystallization kinetics, Kissinger, Ozawa, Tang, and Starink iso-conversional methods were used. The order of dimensional growth and frequency factors were examined with the help of the Matusita–Sakka and Augis–Bennett methods, respectively. Also, the compositional dependence of kinetic parameters was studied for the prepared Se-Te-Ge (STG) glassy alloys.