Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals
The aluminum distribution in the surface layer of an (Al x Ga 1 – x ) 2 O 3 crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with...
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| Veröffentlicht in: | Technical physics letters 2021-03, Vol.47 (3), p.218-221 |
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| container_title | Technical physics letters |
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| creator | Bauman, D. A. P’yankova, L. A. Kremleva, A. V. Spiridonov, V. A. Panov, D. Yu Zakgeim, D. A. Bakhvalov, A. S. Odnoblyudov, M. A. Romanov, A. E. Bugrov, V. E. |
| description | The aluminum distribution in the surface layer of an (Al
x
Ga
1 –
x
)
2
O
3
crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with a change in the physical broadening of the diffraction maxima of the (
h
00) plane system of the crystal and is related to a distance from the seeding zone. |
| doi_str_mv | 10.1134/S1063785021030044 |
| format | Article |
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x
Ga
1 –
x
)
2
O
3
crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with a change in the physical broadening of the diffraction maxima of the (
h
00) plane system of the crystal and is related to a distance from the seeding zone.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785021030044</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminum ; Classical and Continuum Physics ; Crystal growth ; Crystal structure ; Crystals ; Czochralski method ; Mapping ; Physics ; Physics and Astronomy ; Sapphire ; Surface layers ; X-ray fluorescence</subject><ispartof>Technical physics letters, 2021-03, Vol.47 (3), p.218-221</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1063-7850, Technical Physics Letters, 2021, Vol. 47, No. 3, pp. 218–221. © Pleiades Publishing, Ltd., 2021. ISSN 1063-7850, Technical Physics Letters, 2021. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2021, Vol. 47, No. 5, pp. 19–22.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2314-10bfd641097408e09490a3f6e1246e69b8228633364d1ac320c4f5d52c26a5b33</citedby><cites>FETCH-LOGICAL-c2314-10bfd641097408e09490a3f6e1246e69b8228633364d1ac320c4f5d52c26a5b33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063785021030044$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063785021030044$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Bauman, D. A.</creatorcontrib><creatorcontrib>P’yankova, L. A.</creatorcontrib><creatorcontrib>Kremleva, A. V.</creatorcontrib><creatorcontrib>Spiridonov, V. A.</creatorcontrib><creatorcontrib>Panov, D. Yu</creatorcontrib><creatorcontrib>Zakgeim, D. A.</creatorcontrib><creatorcontrib>Bakhvalov, A. S.</creatorcontrib><creatorcontrib>Odnoblyudov, M. A.</creatorcontrib><creatorcontrib>Romanov, A. E.</creatorcontrib><creatorcontrib>Bugrov, V. E.</creatorcontrib><title>Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>The aluminum distribution in the surface layer of an (Al
x
Ga
1 –
x
)
2
O
3
crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with a change in the physical broadening of the diffraction maxima of the (
h
00) plane system of the crystal and is related to a distance from the seeding zone.</description><subject>Aluminum</subject><subject>Classical and Continuum Physics</subject><subject>Crystal growth</subject><subject>Crystal structure</subject><subject>Crystals</subject><subject>Czochralski method</subject><subject>Mapping</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Sapphire</subject><subject>Surface layers</subject><subject>X-ray fluorescence</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1UMtOwzAQtBBIlMIHcLPEBQ6Btddxk2OJSkEq6qHlHLmOU9qmSbATteXEP_CHfAmuisQBcZp9zMyuhpBLBreMobibMJDYi0LgDBBAiCPSYRBDIEPE430tMdjvT8mZc0sAiHgYd8h0UJi1KRtVUFVmdNLYVjet9e2zqutFOadVTpP3Sr_6mVstgqGtNiW9b4sVve4X26Fi9Ovjc3vDx0gTu3PeyZ2Tk9yDufjBLnl5GEyTx2A0Hj4l_VGgOTIRMJjlmRT-zZ6AyEAsYlCYS8O4kEbGs4jzSCKiFBlTGjlokYdZyDWXKpwhdsnVwbe21VtrXJMuq9aW_mTKJUY8DqWQnsUOLG0r56zJ09ou1sruUgbpPrz0T3heww8a57nl3Nhf5_9F3-xBbk4</recordid><startdate>20210301</startdate><enddate>20210301</enddate><creator>Bauman, D. A.</creator><creator>P’yankova, L. A.</creator><creator>Kremleva, A. V.</creator><creator>Spiridonov, V. A.</creator><creator>Panov, D. Yu</creator><creator>Zakgeim, D. A.</creator><creator>Bakhvalov, A. S.</creator><creator>Odnoblyudov, M. A.</creator><creator>Romanov, A. E.</creator><creator>Bugrov, V. E.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20210301</creationdate><title>Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals</title><author>Bauman, D. A. ; P’yankova, L. A. ; Kremleva, A. V. ; Spiridonov, V. A. ; Panov, D. Yu ; Zakgeim, D. A. ; Bakhvalov, A. S. ; Odnoblyudov, M. A. ; Romanov, A. E. ; Bugrov, V. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2314-10bfd641097408e09490a3f6e1246e69b8228633364d1ac320c4f5d52c26a5b33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum</topic><topic>Classical and Continuum Physics</topic><topic>Crystal growth</topic><topic>Crystal structure</topic><topic>Crystals</topic><topic>Czochralski method</topic><topic>Mapping</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Sapphire</topic><topic>Surface layers</topic><topic>X-ray fluorescence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bauman, D. A.</creatorcontrib><creatorcontrib>P’yankova, L. A.</creatorcontrib><creatorcontrib>Kremleva, A. V.</creatorcontrib><creatorcontrib>Spiridonov, V. A.</creatorcontrib><creatorcontrib>Panov, D. Yu</creatorcontrib><creatorcontrib>Zakgeim, D. A.</creatorcontrib><creatorcontrib>Bakhvalov, A. S.</creatorcontrib><creatorcontrib>Odnoblyudov, M. A.</creatorcontrib><creatorcontrib>Romanov, A. E.</creatorcontrib><creatorcontrib>Bugrov, V. E.</creatorcontrib><collection>CrossRef</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bauman, D. A.</au><au>P’yankova, L. A.</au><au>Kremleva, A. V.</au><au>Spiridonov, V. A.</au><au>Panov, D. Yu</au><au>Zakgeim, D. A.</au><au>Bakhvalov, A. S.</au><au>Odnoblyudov, M. A.</au><au>Romanov, A. E.</au><au>Bugrov, V. E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2021-03-01</date><risdate>2021</risdate><volume>47</volume><issue>3</issue><spage>218</spage><epage>221</epage><pages>218-221</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>The aluminum distribution in the surface layer of an (Al
x
Ga
1 –
x
)
2
O
3
crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with a change in the physical broadening of the diffraction maxima of the (
h
00) plane system of the crystal and is related to a distance from the seeding zone.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785021030044</doi><tpages>4</tpages></addata></record> |
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| ispartof | Technical physics letters, 2021-03, Vol.47 (3), p.218-221 |
| issn | 1063-7850 1090-6533 |
| language | eng |
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| subjects | Aluminum Classical and Continuum Physics Crystal growth Crystal structure Crystals Czochralski method Mapping Physics Physics and Astronomy Sapphire Surface layers X-ray fluorescence |
| title | Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals |
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