Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals

The aluminum distribution in the surface layer of an (Al x Ga 1 – x ) 2 O 3 crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with...

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Veröffentlicht in:	Technical physics letters 2021-03, Vol.47 (3), p.218-221
Hauptverfasser:	Bauman, D. A., P’yankova, L. A., Kremleva, A. V., Spiridonov, V. A., Panov, D. Yu, Zakgeim, D. A., Bakhvalov, A. S., Odnoblyudov, M. A., Romanov, A. E., Bugrov, V. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Classical and Continuum Physics Crystal growth Crystal structure Crystals Czochralski method Mapping Physics Physics and Astronomy Sapphire Surface layers X-ray fluorescence
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Zusammenfassung:	The aluminum distribution in the surface layer of an (Al x Ga 1 – x ) 2 O 3 crystal grown on a sapphire seed by the Czochralski method has been studied using X-ray fluorescence and X-ray diffraction mapping and scanning electron microscopy. It is shown that the aluminum distribution correlates with a change in the physical broadening of the diffraction maxima of the ( h 00) plane system of the crystal and is related to a distance from the seeding zone.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785021030044