Construction of SnS2@MoS2@rGO heterojunction anode and their half/full sodium ion storage performances
•An anode material with heterojunction structure has been synthesized by fixing SnS2 nanoparticles on the surface of MoS2@rGO.•The SnS2@MoS2@rGO anode electrodes display a high reversible capacity of 237 mAh g–1 at 3.2 A g–1 after 140 cycles.•The SnS2@MoS2@rGO||Na3V2(PO4)3@C full cells can even exhi...
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Veröffentlicht in: | Journal of alloys and compounds 2022-03, Vol.896, p.162784, Article 162784 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | •An anode material with heterojunction structure has been synthesized by fixing SnS2 nanoparticles on the surface of MoS2@rGO.•The SnS2@MoS2@rGO anode electrodes display a high reversible capacity of 237 mAh g–1 at 3.2 A g–1 after 140 cycles.•The SnS2@MoS2@rGO||Na3V2(PO4)3@C full cells can even exhibit ideal specific capacity and potential application prospects.
Transition metal sulfides exhibit great potential in the application of sodium ion battery anode materials because of their unique properties and high theoretical capacity. Nevertheless, their inferior rate and cycling performances impede the commercialization process. Pseudocapacitance is a significant sodium ion storage behavior to enhance reaction kinetics, which is beneficial to the improvement of electrochemical performances. Herein, an anode material possessing heterojunction structure has been constructed through decorating SnS2 nanoparticles on the surface of MoS2@rGO (SnS2@MoS2@rGO), displaying a high reversible capacity of 237 mAh g–1 at 3.2 A g–1 and 167 mAh g–1 at 6.4 A g–1 after 140 cycles. The good electrochemical performances of SnS2@MoS2@rGO electrode can be ascribed to the enlarged surface areas and fast sodium ion transport channel resulting from the heterojunction structure. In addition, the sodium ion full cell consists of SnS2@MoS2@rGO anode and Na3V2(PO4)3@C cathode can even exhibit ideal specific capacity (33 mAh g−1 at 20 C (1 C = 117 mA g−1)), showing potential application prospects. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2021.162784 |