Effects of (Li/Na/K) doping and point defects (VAl, Hi) on the transmission performance and optical properties of AlN

The effects of Li/Na/K doping on the photoelectric properties of AlN system have been widely reported to date. However, in the experiment, the H interstitial caused by the metal organic chemical vapor deposition and the vacuum coating method in the AlN system is often neglected, and control the Al v...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2022-04, Vol.128 (4), Article 270
Hauptverfasser: Wang, Zhichao, Hou, Qingyu, Guan, Yuqin
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The effects of Li/Na/K doping on the photoelectric properties of AlN system have been widely reported to date. However, in the experiment, the H interstitial caused by the metal organic chemical vapor deposition and the vacuum coating method in the AlN system is often neglected, and control the Al vacancy in the experiment accurately is impossible. To solve such problems, the first-principles hybrid functional HSE06 method was used to study the influence of point defects ( V Al 3–/2–/1–/0 , H i + ) and Li/Na/K doping on the transmission performance of the AlN system. Compared with all doped systems, when the total valence state of the Al 70 KH i N 72 system is 4–, the Al 70 KH i N 72 system exhibits magnetic properties, the lowest formation energy, the easiest point defect doping, the largest binding energy, the best thermodynamic stability, and the highest mobility. That is, its transmission performance is the best. The imaginary part of the dielectric function has the strongest peak around 0.12 eV, and the real part of the dielectric function ε 1 ( 0 ) has the largest static permittivity. This finding has a certain theoretical guidance for the experimental design and preparation of new AlN photoelectric functional materials.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-05391-6