Investigation of parameters of new MAPD-3NM silicon photomultipliers

In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is...

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Veröffentlicht in:	Journal of instrumentation 2022-01, Vol.17 (1), p.C01001
Hauptverfasser:	Ahmadov, F., Ahmadov, G., Akbarov, R., Aktag, A., Budak, E., Doganci, E., Gurer, U., Holik, M., Kahraman, A., Karaçali, H., Lyubchyk, S., Lyubchyk, A., Mammadli, A., Mamedov, F., Nuruyev, S., Pridal, P., Sadigov, A., Sadygov, Z., Urban, O., Yilmaz, E., Yilmaz, O., Zich, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Buried structures Company structure Gamma detectors Gamma rays Parameters Photodiodes Photomultiplier tubes Photon detectors for UV, visible and IR photons (gas) (gas-photocathodes, solid-photocathodes) Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc.) Spectrometers
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Zusammenfassung:	In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.
ISSN:	1748-0221 1748-0221
DOI:	10.1088/1748-0221/17/01/C01001