Optically detected magnetic resonance of nitrogen-vacancy centers in vertical diamond Schottky diodes

Diamond solid-state devices are very attractive to electrically control the charge state of nitrogen-vacancy (NV) centers. In this work, p-type vertical diamond Schottky diodes (VDSDs) are introduced as a platform to electrically control the interconversion between the neutral charge NV (NV 0 ) and negatively charged NV (NV − ) centers. The photoluminescence of NV centers generated by ion implantation in VDSDs shows an increase in NV − zero phonon line (ZPL) and phonon sideband intensities with reverse voltage, whereas the NV 0 ZPL intensity decreases. Thus, NV centers embedded in VDSDs are converted into NV − under reverse bias voltage. Moreover, the optically detected magnetic resonance (ODMR) of NV − exhibits an increase in the ODMR contrast with reverse bias voltage and splitting of the resonance dips. Since no magnetic field is applied, the dip splitting in the ODMR spectrum is ascribed to the Stark effect induced by the interaction of NV − with the electric field existing within the depletion region of VDSDs.