Physicochemical investigations of structurally enriched Sm3+ substituted SnO2 nanocrystals
The present study portrays structural, magnetic, electrical, optical and electronic characteristics of polycrystalline pristine and aliovalent Sm 3+ modified Tin oxide (SnO 2 ) nanocrystals [Sn (1− x ) Sm x O 2 nanocrystals, where x = 0, x = 0.05, and x = 0.10] were synthesized using conventional...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2022-03, Vol.33 (8), p.5283-5296 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The present study portrays structural, magnetic, electrical, optical and electronic characteristics of polycrystalline pristine and aliovalent Sm
3+
modified Tin oxide (SnO
2
) nanocrystals [Sn
(1−
x
)
Sm
x
O
2
nanocrystals, where
x
= 0,
x
= 0.05, and
x
= 0.10] were synthesized using conventional sol–gel route. X-ray diffractogram showed rutile-type tetragonal crystallinity [space group P4
2/
mnm] for all the samples. Microstructural investigations depicted well-interlinked grains and it was observed that average grain size increases with Sm
3+
substitution in the crystal framework of SnO
2
. HRTEM images also confirmed the tetragonal rutile symmetry for all the compositions. FTIR spectra validated the phase pure synthesis and formation of Sm
3+
substituted SnO
2
nanocrystals as bend at 470 cm
−1
attributed to the Sn/Sm–O vibrations. Magnetic measurements depicted that Sm
3+
modified compositions showed room temperature magnetism with low coercivity and retentivity, while pristine SnO
2
nanocrystals illustrated diamagnetism at higher magnetic field and defect-assisted ferromagnetism at low fields. The maximum value of dielectric constant (
ε
′) was observed for pure SnO
2
, and dielectric constant (
ε
′) decreases with increasing Sm
3+
concentration. I-V curves showed non-linear behavior for all the samples and the maximum resistance was found for pure SnO
2
nanocrystals. The incorporation of aliovalent rare-earth Sm
3+
ion in SnO
2
crystal matrix induces ferromagnetism in the system, which makes it dilute magnetic semiconductor for magneto-or spin electronics. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-022-07716-w |