Roadmap for Ferroelectric Domain Wall Nanoelectronics

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to electronic properties distinct from the bulk that can also be electrically programmed. These nanoscale features currently are being actively explored for the development of agile, low‐energy electronics for applications in memory, logic, and brain‐inspired neuromorphic computing. In this article, the authors review the state of the art, the latest developments, and outline key device and material challenges, emerging opportunities, and new directions for the accelerated engineering and commercialization of domain wall technology. Ferroelectric domain walls are electrically programmable nanoscale interfaces that are highly promising for the development of low‐energy electronics for applications in memory, logic, and brain‐inspired computing. In this article, the authors review the latest developments and outline key device issues, material challenges, and opportunities for the accelerated engineering and commercialization of domain wall technology.