Thermally tunable dielectric performance of t-ZrO2 stabilized amorphous Si(Pb,Zr)OC ceramic nanocomposites

The study reports in-situ nanocrystallization of Pb stabilized t-ZrO2 in an amorphous Si(Pb,Zr)OC matrix (PZSiOC) derived from lead zirconate modified poly(hydridomethylsiloxane) with thermally tunable dielectric behavior. The stabilization of t-ZrO2 phase in the amorphous silicon oxycarbide (SiOC) matrix is ascribed to the critical crystallite size effect and incorporation of Pb ion into the t-ZrO2 lattice. The dielectric behavior as a function of temperature (−50 °C–300 °C) and frequency (100 Hz–10 MHz) is comprehensively investigated. It is observed that these ceramic nanocomposites exhibit high permittivity and low loss in contrast to SiOC at all measured temperatures and reached colossal values (ε’> 104) above critical temperature with an S-shaped frequency dependent dielectric loss. Thermally activated interfacial-charge polarization process can be reasoned out for this interesting behavior. The study paves the way for the attainment of cost-effective, tailored as well as highly functional PZSiOC ceramic nanocomposites with colossal permittivity for a wide array of applications. The dielectric permittivity results exemplify the huge potential of PZSiOC ceramic nanocomposites in energy storage devices. Studies are in progress to assess the suitability of PZSiOC ceramic nanocomposites in supercapacitors. [Display omitted] •Pb stabilized t-ZrO2 in an amorphous Si(Pb,Zr)OC matrix (PZSiOC) exemplify thermally tunable dielectric behavior.•Compared to SiOC, PZSiOC nanocomposites showed high permittivity and low loss at all measured temperatures.•PZSiOC reached colossal values (ε’> 104) above critical temperature with an S-shaped frequency dependent dielectric loss.•Thermally activated interfacial-charge polarization process contributes to superior dielectric performance.