Simulation of initial stage of silicon cluster formation during post-annealing of memristive structures based on silicon oxide films subjected to Si+ implantation

•Initial defect annealing stage (100 ns) is simulated in Si+-implanted SiO1.7.•Si clusters evolve into crystal-like Sin clusters with n up to 16.•Similar processes are expected due to Joule heating in SiO1.7-based memristors. The evolution of the SiO1.7 film defect structure caused by Si+ ion implan...

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Veröffentlicht in:	Materials letters 2022-03, Vol.310, p.131494, Article 131494
Hauptverfasser:	Okulich, E.V., Okulich, V.I., Tetelbaum, D.I., Mikhaylov, A.N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Clustering Electroforming Ion implantation Materials science memristor Memristors Molecular dynamics Oxide coatings resistive switching Silicon silicon oxide Silicon oxides
Online-Zugang:	Volltext
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