Simulation of initial stage of silicon cluster formation during post-annealing of memristive structures based on silicon oxide films subjected to Si+ implantation

•Initial defect annealing stage (100 ns) is simulated in Si+-implanted SiO1.7.•Si clusters evolve into crystal-like Sin clusters with n up to 16.•Similar processes are expected due to Joule heating in SiO1.7-based memristors. The evolution of the SiO1.7 film defect structure caused by Si+ ion implantation and post-annealing at 1500K for 100 ns has been simulated by using two methods: Monte-Carlo and molecular dynamics. Clustering of silicon atoms and change of the near-structure close order are detected for the selected ion dose of 1·1017 cm-2. The results are discussed in relation to the problem of ion modification of silicon-oxide-based memristors and microscopic mechanisms of electroforming and resistive switching.