A co-crystallization strategy toward high-performance n-type organic semiconductors through charge transport switching from p-type planar azaacene derivatives
In this work, we demonstrated that the co-crystallization strategy has offered an efficient and promising alternative route to achieve high-performance n-type semiconductors through charge-transport switching from pristine p-type systems. By using a simple "green synthesis" process through...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-02, Vol.1 (7), p.2757-2762 |
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Sprache: | eng |
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Zusammenfassung: | In this work, we demonstrated that the co-crystallization strategy has offered an efficient and promising alternative route to achieve high-performance n-type semiconductors through charge-transport switching from pristine p-type systems. By using a simple "green synthesis" process through molecular "doping" with F
4
TCNQ into a p-type planar azaacene derivative TMIQ (0.27 cm
2
V
−1
s
−1
) host, charge transport characteristic switching occurs with a high electron mobility of 0.12 cm
2
V
−1
s
−1
under atmospheric conditions obtained for the D-A complex TMF4TQ (cocrystal). The reasons for such switching lie in the ingenious energy level and molecular packing arrangement tailoring. Specifically, the insertion of F
4
TCNQ molecules has led to packing transformation from herringbone stacking (TMIQ) to a dense 2D brick arrangement and the low-lying LUMO levels (−4.55 eV) aligned to gold electrodes, thereby facilitating efficient electron injection and transport, and ensuring the air-stable nature, which is further confirmed using theoretical calculations. We believe that our work would provide new insights into high-performance air-stable n-type organic semiconductors exploration.
The co-crystallization strategy has offered an efficient route to achieve high-performance n-type semiconductors through charge-transport switching from pristine p-type azaacene derivatives. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d1tc04610a |