Low‐Energy UV Ultrafast Laser Controlled Lift‐Off for High‐Quality Flexible GaN‐Based Device (Adv. Funct. Mater. 8/2022)

Ultrafast Laser Lift‐Off In article number 2111920, Lingfei Ji and co‐workers present a novel one‐step laser lift‐off (LLO) for an ultra‐smooth, low‐stress patterned gallium nitride (GaN) film and GaN‐based light‐emitting diode device without affecting the electroluminescence performance of the low‐...

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Veröffentlicht in:	Advanced functional materials 2022-02, Vol.32 (8), p.n/a
Hauptverfasser:	Sun, Weigao, Ji, Lingfei, Lin, Zhenyuan, Zheng, Jincan, Wang, Zhiyong, Zhang, Litian, Yan, Tianyang
Format:	Artikel
Sprache:	eng
Schlagworte:	Electroluminescence flexible electronics Gallium nitrides GaN devices Lasers Light emitting diodes Materials science photochemical decomposition plasma ultrafast laser lift‐off Ultrafast lasers
Online-Zugang:	Volltext
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Zusammenfassung:	Ultrafast Laser Lift‐Off In article number 2111920, Lingfei Ji and co‐workers present a novel one‐step laser lift‐off (LLO) for an ultra‐smooth, low‐stress patterned gallium nitride (GaN) film and GaN‐based light‐emitting diode device without affecting the electroluminescence performance of the low‐energy ultrafast laser, showing great promise in industrial fabrication of flexible GaN‐based electronics.
ISSN:	1616-301X 1616-3028
DOI:	10.1002/adfm.202270051