High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates

The conditions for the growth of polycrystalline GeSn layers on diamond substrates are determined. The effect of the incorporation of Sn in Ge layers on their morphology, structure, and transport properties is studied. GeSn layers with a thickness of 0.5 μm, obtained by the hot‐wire chemical vapor d...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2022-01, Vol.16 (1), p.n/a
Hauptverfasser:	Buzynin, Yury N., Shengurov, Vladimir G., Denisov, Sergei A., Yunin, Pavel A., Chalkov, Vadim Yu, Drozdov, Michael N., Korolyov, Sergei A., Nezhdanov, Alexei V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Crystallites diamond substrates Diamonds electrophysical parameters Germanium GeSn layers Grain size Hole mobility Intermetallic compounds morphologies Polycrystals structures Substrates Surface roughness Thickness Tin Transport properties Wire
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!