High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates

The conditions for the growth of polycrystalline GeSn layers on diamond substrates are determined. The effect of the incorporation of Sn in Ge layers on their morphology, structure, and transport properties is studied. GeSn layers with a thickness of 0.5 μm, obtained by the hot‐wire chemical vapor deposition method at 300 °C without annealing, are uniform with a surface roughness of less than 1.0 nm. It is shown that the incorporation of 1% Sn into the Ge lattice makes it possible to significantly increase the hole mobility of the GeSn layers from 30 to 140 cm2 V−1 s−1 despite the small crystallite grain size of 35–45 nm. The conditions for the growth of polycrystalline GeSn layers by the hot‐wire chemical vapor deposition method at 300 °C without annealing on diamond substrates are determined. It is shown that the incorporation of 1% Sn into the Ge lattice significantly increases the hole mobility of GeSn layers from 30 to 140 cm2 V−1 s−1.