Study of memristive devices on the base of siloxane quatrothiophene dimer

Memristive devices may be based on inorganic or organic materials. In this work we were assembled memristive devices using a thiophene oligomer for the first time. The semiconductive oligothiophene film was prepared by Langmuir-Schaefer technique. Both Langmuir and Langmuir-Schaefer films were characterized by a number of methods. Non-volatile three-electrode memristive devices were assembled and characterized by measuring the I-V curve, kinetics and endurance.