Influence of Thermal Annealing on Terahertz Dielectric Properties of ZnGeP2 Crystals

The influence of thermal annealing on the dielectric properties of ZnGeP 2 crystals in the terahertz frequency range is studied by terahertz time domain spectroscopy. The effect of “transformation” of a positive birefringent ZnGeP 2 crystal into a negative one is found upon transition from the IR to...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Russian physics journal 2021-12, Vol.64 (8), p.1513-1516
Hauptverfasser:	Voevodin, V. I., Yudin, N. N., Sarkisov, S. Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorptivity Annealing Condensed Matter Physics Crystals Dielectric properties Frequency ranges Hadrons Heavy Ions Lasers Mathematical and Computational Physics Nuclear Physics Optical Devices Optics Photonics Physics Physics and Astronomy Refractivity Terahertz frequencies Theoretical
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The influence of thermal annealing on the dielectric properties of ZnGeP 2 crystals in the terahertz frequency range is studied by terahertz time domain spectroscopy. The effect of “transformation” of a positive birefringent ZnGeP 2 crystal into a negative one is found upon transition from the IR to the terahertz frequency range. A decrease of the absorption coefficients and refractive indices in the frequency range of 0.25–2.5 THz after annealing of the crystals at temperatures of 575–700°C for 300–400 hours is also revealed.
ISSN:	1064-8887 1573-9228
DOI:	10.1007/s11182-021-02484-2