n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region

•n-ZnO/p-CuZnS heterojunction grown by spray pyrolysis showed good rectification.•Heterostructure showed good responsivity of 0.255 A/W for UV light of 385 nm.•LT Raman analysis showed strain variation with temperature. [Display omitted] In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption