Characterization of RF magnetron-sputtered a-BOxNy/ZnO MIS structures for transparent electronics

X-ray photoelectron spectroscopy (XPS) confirmed that RF magnetron sputtering of h -BN onto unheated substrates produced a -BO x N y films under all of the sputtering conditions studied. The surface roughness improved and pinholes were eliminated as the deposition pressure increased. Analysis of the...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2022, Vol.33 (2), p.974-984
Hauptverfasser: Iheomamere, Chukwudi E., Arnold, Corey L., Summers, Jason, Reidy, Richard F., Voevodin, Andrey A., Shepherd, Nigel D.
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Sprache:eng
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Zusammenfassung:X-ray photoelectron spectroscopy (XPS) confirmed that RF magnetron sputtering of h -BN onto unheated substrates produced a -BO x N y films under all of the sputtering conditions studied. The surface roughness improved and pinholes were eliminated as the deposition pressure increased. Analysis of the current density dependence on the electric field of the a -BO x N y films suggests field-enhanced Schottky emission and/or Frenkel-Poole emission transport mechanisms. The highest breakdown strength obtained was 8 MV cm −1 . A bandgap of 3.9 eV was confirmed by spectroscopic ellipsometry and UV–Vis spectroscopy. An interface trap concentration ( N it ) of 7.3 × 10 10  cm −2 and interface state density ( N ss ) of 7.5 × 10 12  eV −1  cm −2 were measured for transparent ITO/ a -BO x N y /ZnO metal–insulator-semiconductor (MIS) structures. Approximately, 2 V was required to switch the a -BO x N y /ZnO interface from accumulation to inversion.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-07368-2