Thermoelectric Properties of SiC-Nanocomposite n-Type Bi2(Te0.90Se0.10)3 Prepared by Mechanical Alloying and Microwave Sintering
n -type Bi 2 (Te 0.90 Se 0.10 ) 3 /(SiC) y (0 ≤ y ≤ 0.01) composites with nano-SiC were fabricated by mechanical alloying combined with microwave sintering. The microstructure and thermoelectric properties of Bi 2 (Te 0.90 Se 0.10 ) 3 /(SiC) y were studied systematically. The nano-SiC particles as...
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| Veröffentlicht in: | Journal of electronic materials 2022-02, Vol.51 (2), p.516-521 |
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| container_title | Journal of electronic materials |
| container_volume | 51 |
| creator | Liu, Hongliang Guo, Zhiying Duan, Xinyu Yuan, Xiaofeng Gao, Qianqian |
| description | n
-type Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
(0 ≤
y
≤ 0.01) composites with nano-SiC were fabricated by mechanical alloying combined with microwave sintering. The microstructure and thermoelectric properties of Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
were studied systematically. The nano-SiC particles as the phonon scattering center uniformly distributed in the matrix, with little effect on the electric transport performance and significantly reducing the thermal conductivity of
n
-type Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
(0 ≤
y
≤ 0.01). The introduction of nano-SiC optimizes the thermoelectric performance, and the sample with SiC
y
= 0.0075 obtains the highest
ZT
~0.94 at 323 K. |
| doi_str_mv | 10.1007/s11664-021-09320-w |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2620838569</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2620838569</sourcerecordid><originalsourceid>FETCH-LOGICAL-c234w-f461fb8a23171d333ed02b72585936cfa1fd4f5095f30493559fff01b789637c3</originalsourceid><addsrcrecordid>eNp9kEFv1DAQhS0EEkvhD3Cy1Es5uJ2xYyc5tiuglVpA6iJxs7zOmLrKxsFOWe2tP73ZbiVunEYave_Nm8fYR4RTBKjPCqIxlQCJAlolQWxfsQXqSglszK_XbAHKoNBS6bfsXSn3AKixwQV7XN1R3iTqyU85ev4jp5HyFKnwFPhtXIpvbkg-bcZU4kR8EKvdSPwiypMVwWkLt7SP8EnNJI0uU8fXO35D_s4N0buen_d92sXhN3dDx2-iz2nr_tLsPEyU5_179ia4vtCHl3nEfn75vFpeiuvvX6-W59fCS1VtRagMhnXjpMIaO6UUdSDXtdSNbpXxwWHoqqCh1UFB1Sqt2xAC4LpuWqNqr47Y8cF3zOnPA5XJ3qeHPMwnrTQSGtVo084qeVDNOUvJFOyY48blnUWw-6btoWk7N22fm7bbGVIHqIz7jyj_s_4P9QQuMIBo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2620838569</pqid></control><display><type>article</type><title>Thermoelectric Properties of SiC-Nanocomposite n-Type Bi2(Te0.90Se0.10)3 Prepared by Mechanical Alloying and Microwave Sintering</title><source>Springer Nature - Complete Springer Journals</source><creator>Liu, Hongliang ; Guo, Zhiying ; Duan, Xinyu ; Yuan, Xiaofeng ; Gao, Qianqian</creator><creatorcontrib>Liu, Hongliang ; Guo, Zhiying ; Duan, Xinyu ; Yuan, Xiaofeng ; Gao, Qianqian</creatorcontrib><description>n
-type Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
(0 ≤
y
≤ 0.01) composites with nano-SiC were fabricated by mechanical alloying combined with microwave sintering. The microstructure and thermoelectric properties of Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
were studied systematically. The nano-SiC particles as the phonon scattering center uniformly distributed in the matrix, with little effect on the electric transport performance and significantly reducing the thermal conductivity of
n
-type Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
(0 ≤
y
≤ 0.01). The introduction of nano-SiC optimizes the thermoelectric performance, and the sample with SiC
y
= 0.0075 obtains the highest
ZT
~0.94 at 323 K.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-021-09320-w</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Crystal structure ; Density ; Electronics and Microelectronics ; Grain boundaries ; Grain size ; Heat conductivity ; Instrumentation ; Materials Science ; Mechanical alloying ; Microscopy ; Microstructure ; Microwave sintering ; Nanocomposites ; Optical and Electronic Materials ; Original Research Article ; Silicon carbide ; Sintering ; Solid State Physics ; Thermal conductivity ; Thermoelectricity</subject><ispartof>Journal of electronic materials, 2022-02, Vol.51 (2), p.516-521</ispartof><rights>The Minerals, Metals & Materials Society 2021</rights><rights>The Minerals, Metals & Materials Society 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c234w-f461fb8a23171d333ed02b72585936cfa1fd4f5095f30493559fff01b789637c3</citedby><cites>FETCH-LOGICAL-c234w-f461fb8a23171d333ed02b72585936cfa1fd4f5095f30493559fff01b789637c3</cites><orcidid>0000-0002-1067-4661</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-021-09320-w$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-021-09320-w$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,41469,42538,51300</link.rule.ids></links><search><creatorcontrib>Liu, Hongliang</creatorcontrib><creatorcontrib>Guo, Zhiying</creatorcontrib><creatorcontrib>Duan, Xinyu</creatorcontrib><creatorcontrib>Yuan, Xiaofeng</creatorcontrib><creatorcontrib>Gao, Qianqian</creatorcontrib><title>Thermoelectric Properties of SiC-Nanocomposite n-Type Bi2(Te0.90Se0.10)3 Prepared by Mechanical Alloying and Microwave Sintering</title><title>Journal of electronic materials</title><addtitle>J. Electron. Mater</addtitle><description>n
-type Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
(0 ≤
y
≤ 0.01) composites with nano-SiC were fabricated by mechanical alloying combined with microwave sintering. The microstructure and thermoelectric properties of Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
were studied systematically. The nano-SiC particles as the phonon scattering center uniformly distributed in the matrix, with little effect on the electric transport performance and significantly reducing the thermal conductivity of
n
-type Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
(0 ≤
y
≤ 0.01). The introduction of nano-SiC optimizes the thermoelectric performance, and the sample with SiC
y
= 0.0075 obtains the highest
ZT
~0.94 at 323 K.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Crystal structure</subject><subject>Density</subject><subject>Electronics and Microelectronics</subject><subject>Grain boundaries</subject><subject>Grain size</subject><subject>Heat conductivity</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Mechanical alloying</subject><subject>Microscopy</subject><subject>Microstructure</subject><subject>Microwave sintering</subject><subject>Nanocomposites</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Silicon carbide</subject><subject>Sintering</subject><subject>Solid State Physics</subject><subject>Thermal conductivity</subject><subject>Thermoelectricity</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kEFv1DAQhS0EEkvhD3Cy1Es5uJ2xYyc5tiuglVpA6iJxs7zOmLrKxsFOWe2tP73ZbiVunEYave_Nm8fYR4RTBKjPCqIxlQCJAlolQWxfsQXqSglszK_XbAHKoNBS6bfsXSn3AKixwQV7XN1R3iTqyU85ev4jp5HyFKnwFPhtXIpvbkg-bcZU4kR8EKvdSPwiypMVwWkLt7SP8EnNJI0uU8fXO35D_s4N0buen_d92sXhN3dDx2-iz2nr_tLsPEyU5_179ia4vtCHl3nEfn75vFpeiuvvX6-W59fCS1VtRagMhnXjpMIaO6UUdSDXtdSNbpXxwWHoqqCh1UFB1Sqt2xAC4LpuWqNqr47Y8cF3zOnPA5XJ3qeHPMwnrTQSGtVo084qeVDNOUvJFOyY48blnUWw-6btoWk7N22fm7bbGVIHqIz7jyj_s_4P9QQuMIBo</recordid><startdate>20220201</startdate><enddate>20220201</enddate><creator>Liu, Hongliang</creator><creator>Guo, Zhiying</creator><creator>Duan, Xinyu</creator><creator>Yuan, Xiaofeng</creator><creator>Gao, Qianqian</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0002-1067-4661</orcidid></search><sort><creationdate>20220201</creationdate><title>Thermoelectric Properties of SiC-Nanocomposite n-Type Bi2(Te0.90Se0.10)3 Prepared by Mechanical Alloying and Microwave Sintering</title><author>Liu, Hongliang ; Guo, Zhiying ; Duan, Xinyu ; Yuan, Xiaofeng ; Gao, Qianqian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c234w-f461fb8a23171d333ed02b72585936cfa1fd4f5095f30493559fff01b789637c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Crystal structure</topic><topic>Density</topic><topic>Electronics and Microelectronics</topic><topic>Grain boundaries</topic><topic>Grain size</topic><topic>Heat conductivity</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Mechanical alloying</topic><topic>Microscopy</topic><topic>Microstructure</topic><topic>Microwave sintering</topic><topic>Nanocomposites</topic><topic>Optical and Electronic Materials</topic><topic>Original Research Article</topic><topic>Silicon carbide</topic><topic>Sintering</topic><topic>Solid State Physics</topic><topic>Thermal conductivity</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Hongliang</creatorcontrib><creatorcontrib>Guo, Zhiying</creatorcontrib><creatorcontrib>Duan, Xinyu</creatorcontrib><creatorcontrib>Yuan, Xiaofeng</creatorcontrib><creatorcontrib>Gao, Qianqian</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Hongliang</au><au>Guo, Zhiying</au><au>Duan, Xinyu</au><au>Yuan, Xiaofeng</au><au>Gao, Qianqian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermoelectric Properties of SiC-Nanocomposite n-Type Bi2(Te0.90Se0.10)3 Prepared by Mechanical Alloying and Microwave Sintering</atitle><jtitle>Journal of electronic materials</jtitle><stitle>J. Electron. Mater</stitle><date>2022-02-01</date><risdate>2022</risdate><volume>51</volume><issue>2</issue><spage>516</spage><epage>521</epage><pages>516-521</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>n
-type Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
(0 ≤
y
≤ 0.01) composites with nano-SiC were fabricated by mechanical alloying combined with microwave sintering. The microstructure and thermoelectric properties of Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
were studied systematically. The nano-SiC particles as the phonon scattering center uniformly distributed in the matrix, with little effect on the electric transport performance and significantly reducing the thermal conductivity of
n
-type Bi
2
(Te
0.90
Se
0.10
)
3
/(SiC)
y
(0 ≤
y
≤ 0.01). The introduction of nano-SiC optimizes the thermoelectric performance, and the sample with SiC
y
= 0.0075 obtains the highest
ZT
~0.94 at 323 K.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-021-09320-w</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-1067-4661</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2022-02, Vol.51 (2), p.516-521 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_journals_2620838569 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Crystal structure Density Electronics and Microelectronics Grain boundaries Grain size Heat conductivity Instrumentation Materials Science Mechanical alloying Microscopy Microstructure Microwave sintering Nanocomposites Optical and Electronic Materials Original Research Article Silicon carbide Sintering Solid State Physics Thermal conductivity Thermoelectricity |
| title | Thermoelectric Properties of SiC-Nanocomposite n-Type Bi2(Te0.90Se0.10)3 Prepared by Mechanical Alloying and Microwave Sintering |
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