Thermoelectric Properties of SiC-Nanocomposite n-Type Bi2(Te0.90Se0.10)3 Prepared by Mechanical Alloying and Microwave Sintering

n -type Bi 2 (Te 0.90 Se 0.10 ) 3 /(SiC) y (0 ≤  y  ≤ 0.01) composites with nano-SiC were fabricated by mechanical alloying combined with microwave sintering. The microstructure and thermoelectric properties of Bi 2 (Te 0.90 Se 0.10 ) 3 /(SiC) y were studied systematically. The nano-SiC particles as...

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Veröffentlicht in:Journal of electronic materials 2022-02, Vol.51 (2), p.516-521
Hauptverfasser: Liu, Hongliang, Guo, Zhiying, Duan, Xinyu, Yuan, Xiaofeng, Gao, Qianqian
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Sprache:eng
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Zusammenfassung:n -type Bi 2 (Te 0.90 Se 0.10 ) 3 /(SiC) y (0 ≤  y  ≤ 0.01) composites with nano-SiC were fabricated by mechanical alloying combined with microwave sintering. The microstructure and thermoelectric properties of Bi 2 (Te 0.90 Se 0.10 ) 3 /(SiC) y were studied systematically. The nano-SiC particles as the phonon scattering center uniformly distributed in the matrix, with little effect on the electric transport performance and significantly reducing the thermal conductivity of n -type Bi 2 (Te 0.90 Se 0.10 ) 3 /(SiC) y (0 ≤  y  ≤ 0.01). The introduction of nano-SiC optimizes the thermoelectric performance, and the sample with SiC y  = 0.0075 obtains the highest ZT ~0.94 at 323 K.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-021-09320-w