Effect of Hydrothermal Synthesis Temperature on the Microstructural and Thermoelectric Characteristics of Thermally Deposited Bi0.5Sb1.5Te3 Thin Films
Bismuth antimony telluride (Bi 0.5 Sb 1.5 Te 3 ) is a ternary compound with good thermoelectric properties at near room temperature. In this research, Bi 0.5 Sb 1.5 Te 3 powders were hydrothermally synthesized at different temperatures (100, 150, 190, and 230°C) for 24 h. The deposition procedure of...
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Veröffentlicht in: | Journal of electronic materials 2022-02, Vol.51 (2), p.495-507 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Bismuth antimony telluride (Bi
0.5
Sb
1.5
Te
3
) is a ternary compound with good thermoelectric properties at near room temperature. In this research, Bi
0.5
Sb
1.5
Te
3
powders were hydrothermally synthesized at different temperatures (100, 150, 190, and 230°C) for 24 h. The deposition procedure of Bi
0.5
Sb
1.5
Te
3
thin films was done by using thermal evaporation. The phases and microstructures of powders and thin films were investigated by x-ray diffraction and field emission scanning electron microscopy. Moreover, the size distribution of powders was investigated using a particle size analyzer. The phase and microstructural results of the different synthesized powders confirmed that the Bi
0.5
Sb
1.5
Te
3
thin film prepared by powder synthesis at 150°C for 24 h is the best choice for manufacturing with good thermoelectric properties because of its nano-sized grains and high purity. The results showed that the Bi
0.5
Sb
1.5
Te
3
thin film fabricated by powders synthesized at 150°C has a single rhombohedral phase with a good semiconductor performance. The results of thermoelectric tests confirmed that the Bi
0.5
Sb
1.5
Te
3
thin film fabricated using a hydrothermal method and thermal evaporation deposition approach shows a high Seebeck coefficient (183.5 μV/K) and low electronic thermal conductivity (1.32 × 10
−4
W/m k
−1
) at 298 K. Besides, the power factor values of 0.7, 2.59 and 2.9 μW/cm K
−2
were obtained at 298, 373 K and 473 K, respectively.
Graphical Abstract |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-021-09332-6 |