Light management of PERC solar cell with the front and back dielectric multilayers

Light management is one of the important methods to increase the efficiency of passivated emitter and rear cells (PERCs). With the help of simulation, we designed and fabricated the industrial Ga‐doped single‐crystalline silicon (sc‐Si) PERC solar cells by integrating the silicon oxynitride (SiOxNy) with the traditional silicon nitride (SiNx) dielectric films on both the front and rear surfaces. In the front, the SiOxNy capping effectively decreased the reflectance in the short‐wavelength light range, thus increased the cells' short circuit current (Isc) by ~50 mA. In the back, the SiOxNy layer was inserted into the rear SiNx film, thus increased the internal reflection at the rear surface in the long‐wavelength light range, resulting in an about 24‐mA Isc gain. Totally, with the front and rear light management, the champion samples showed the significant improvement with an about 80‐mA increment in Isc of cells compared with the baseline group. The Ga‐doped single‐crystalline silicon PERC solar cells were fabricated by integrating the SiOxNy with the traditional SiNx dielectric films on front and rear surfaces. The champion samples showed the significant improvement with an about 80‐mA increment in Isc of cells compared with the baseline.