Morphology-dependent field emission investigations from the 2-dimensional Bi2Se3-RGO nanocomposites
•We have synthesized pristine Bi2Se3 and Bi2Se3-RGO nanocomposites via hydrothermal route.•The Bi2Se3-RGO nanocomposite emitter exhibits superior field emission properties compared to the pristine Bi2Se3 emitter.•For the Bi2Se3-RGO nanocomposite emitter, the turn-on and threshold fields are lowered...
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Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2021-12, Vol.274, p.115450, Article 115450 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | •We have synthesized pristine Bi2Se3 and Bi2Se3-RGO nanocomposites via hydrothermal route.•The Bi2Se3-RGO nanocomposite emitter exhibits superior field emission properties compared to the pristine Bi2Se3 emitter.•For the Bi2Se3-RGO nanocomposite emitter, the turn-on and threshold fields are lowered by ∼37% compared to the corresponding field values for the pristine Bi2Se3 emitter.•At an applied field of ∼3.5 V/µm, the observed current density for Bi2Se3-RGO nanocomposite emitter is ∼100 times larger than that observed for the pristine Bi2Se3 emitter.
The two-dimensional bismuth selenide (Bi2Se3)-reduced graphene oxide (RGO) nanocomposite have been synthesized by simple hydrothermal route for carrying out field emission (FE) studies. The Bi2Se3-RGO nanocomposite field emitters exhibit enhancement in the current densityas compared to pristine Bi2Se3emitter. The turn-on field for Bi2Se3-RGO nanocomposite field emitter decreases by ∼37% of its value for pristine Bi2Se3 emitters. The maximum current density observed from the Bi2Se3-RGO nanocomposite field emitter is ∼1000 µA/cm2 at an applied field of 6.0 V/μm. The influence of Se weight percentage in the Bi2Se3-RGO nanocomposite has been studied to understand the field emission behavior via morphological changes of the emitter surface. The Bi2Se3-RGO nanocomposite structure is thus seen as a prospective candidate for the development of efficient nanoscale field emission devices. |
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ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/j.mseb.2021.115450 |