Low‐Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory

Resistive random access memory (RRAM) based on ultrathin 2D materials is considered to be a very feasible solution for future data storage and neuromorphic computing technologies. However, controllability and stability are the problems that need to be solved for practical applications. Here, by introducing a damage‐less ion implantation technology using ultralow‐energy plasma, the transport mechanisms of space charge limited current and Schottky emission are successfully realized and controlled in RRAM based on 2D Bi2Se3 nanosheets. The memristors exhibit stable resistive switching behavior with a high resistive switching ratio (>104), excellent cycling endurances (300 cycles), and great retention performance (>104 s). The reliability and controllability of Bi2Se3 memory endowed by oxygen plasma injection demonstrate the great potential of this ultralow‐energy ion implantation technology in the application of 2D RRAM. Highly controllable 2D resistive random access memory (RRAM) based on Bi2Se3 nanosheet is achieved by a damage‐less ion implantation technology using ultralow‐energy plasma. The transport mechanism, resistive switching mechanism, memory window, and working voltage in RRAM are successfully controlled by oxygen plasma injection. The memristors demonstrate excellent properties of high resistive switching ratio, outstanding cycling endurance, and retention performance.