Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains

Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains

— The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did not observe. The phenomenon is referred to stron...

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Veröffentlicht in:Journal of communications technology & electronics 2021-12, Vol.66 (12), p.1385-1387
Hauptverfasser: Altukhov, I. V., Dizhur, S. E., Kagan, M. S., Khvalkovskiy, N. A., Paprotskiy, S. K., Vasil’evskii, I. S., Vinichenko, A. N.
Format: Artikel
Sprache:eng
Schlagworte:
Communications Engineering
Depletion
Domains
Electron transport
Engineering
Illumination
Nanoelectronics
Networks
Superlattices
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Zusammenfassung:— The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did not observe. The phenomenon is referred to strong carrier depletion inside the triangular high-field domain. The domain modes transformations under the illumination were also found.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226921440017