Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes

Understanding the properties of N-implanted β-Ga2O3 is fundamental for the optimization of doping and isolation structures based on gallium oxide. This paper reports an extensive analysis of the impact of thermal annealing on the concentration and properties of deep levels in N-implanted β-Ga2O3 Sch...

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Veröffentlicht in:	Journal of applied physics 2021-12, Vol.130 (24)
Hauptverfasser:	Fregolent, Manuel, De Santi, Carlo, Buffolo, Matteo, Higashiwaki, Masataka, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Current voltage characteristics Electron traps Gallium oxides Impact analysis Nitrogen Optimization Schottky diodes
Online-Zugang:	Volltext
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