Accurate Phase Change Behavior Characterization Of Ultrathin Sb-Rich Films Based On Superlattice-like Al/Ge10Sb90 System

Sb-rich films, such as Ge 10 Sb 90 , having ultra-fast phase change speed are promising chalcogenide materials for phase change memory (PCM) applications. However, it is difficult to accurately observe the phase change properties of ultrathin Sb-rich films due to their volatilization at higher temperatures. In this work, we establish a strategy to characterize ultrathin phase change behavior based specifically on Al/Ge 10 Sb 90 superlattice-like (SLL) structures. It is confirmed that the Al layers, which can form a retardant layer without phase change behavior, can efficiently inhibit the volatilization of Ge 10 Sb 90 films. In addition, the crystallization temperature can be modulated by varying the thickness ratio in SLL structures. In particular, the film of [Al(10nm)/Ge 10 Sb 90 (2nm)] 5 is one of the promising candidates owing to their high crystallization temperature, good operating temperature for 10 years and excellent surface roughness.