Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body
A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma-enhanced chemical vapor deposition (MPECVD) was fabricated. The MOSFET exhibited a drain current density of −1.7 mA/mm. Thus far, this...
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| Veröffentlicht in: | Applied physics letters 2021-12, Vol.119 (24) |
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| container_title | Applied physics letters |
| container_volume | 119 |
| creator | Matsumoto, Tsubasa Yamakawa, Tomoya Kato, Hiromitsu Makino, Toshiharu Ogura, Masahiko Zhang, Xufang Inokuma, Takao Yamasaki, Satoshi Tokuda, Norio |
| description | A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma-enhanced chemical vapor deposition (MPECVD) was fabricated. The MOSFET exhibited a drain current density of −1.7 mA/mm. Thus far, this value is similar to the device performance of the inversion p-channel MOSFET fabricated using a phosphorus (P)-doped n-type diamond body. The N2 used for N-doping is safer than the PH3 used for P-doping; moreover, the doping concentration is highly controllable. Because the MOSFET, which is a classical electronic device, is driven by a gate voltage, smooth functioning was possible even at a deep donor level. The observed characteristics of the classic MOSFET operating via an N-doped body are crucial for the development of diamond power devices. In this paper, we discuss the significance of the N-doped diamond body and electrical characteristics of the inversion p-channel MOSFET fabricated using an N-doped diamond body. |
| doi_str_mv | 10.1063/5.0075964 |
| format | Article |
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The MOSFET exhibited a drain current density of −1.7 mA/mm. Thus far, this value is similar to the device performance of the inversion p-channel MOSFET fabricated using a phosphorus (P)-doped n-type diamond body. The N2 used for N-doping is safer than the PH3 used for P-doping; moreover, the doping concentration is highly controllable. Because the MOSFET, which is a classical electronic device, is driven by a gate voltage, smooth functioning was possible even at a deep donor level. The observed characteristics of the classic MOSFET operating via an N-doped body are crucial for the development of diamond power devices. 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The MOSFET exhibited a drain current density of −1.7 mA/mm. Thus far, this value is similar to the device performance of the inversion p-channel MOSFET fabricated using a phosphorus (P)-doped n-type diamond body. The N2 used for N-doping is safer than the PH3 used for P-doping; moreover, the doping concentration is highly controllable. Because the MOSFET, which is a classical electronic device, is driven by a gate voltage, smooth functioning was possible even at a deep donor level. The observed characteristics of the classic MOSFET operating via an N-doped body are crucial for the development of diamond power devices. 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The MOSFET exhibited a drain current density of −1.7 mA/mm. Thus far, this value is similar to the device performance of the inversion p-channel MOSFET fabricated using a phosphorus (P)-doped n-type diamond body. The N2 used for N-doping is safer than the PH3 used for P-doping; moreover, the doping concentration is highly controllable. Because the MOSFET, which is a classical electronic device, is driven by a gate voltage, smooth functioning was possible even at a deep donor level. The observed characteristics of the classic MOSFET operating via an N-doped body are crucial for the development of diamond power devices. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Diamonds Doping Electronic devices Field effect transistors Metal oxide semiconductors Microwave plasmas MOSFETs Nitrogen Plasma enhanced chemical vapor deposition Semiconductor devices |
| title | Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body |
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