Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body

A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma-enhanced chemical vapor deposition (MPECVD) was fabricated. The MOSFET exhibited a drain current density of −1.7 mA/mm. Thus far, this...

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Veröffentlicht in:Applied physics letters 2021-12, Vol.119 (24)
Hauptverfasser: Matsumoto, Tsubasa, Yamakawa, Tomoya, Kato, Hiromitsu, Makino, Toshiharu, Ogura, Masahiko, Zhang, Xufang, Inokuma, Takao, Yamasaki, Satoshi, Tokuda, Norio
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Sprache:eng
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Zusammenfassung:A normally-off inversion p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a nitrogen (N)-doped diamond body deposited using microwave plasma-enhanced chemical vapor deposition (MPECVD) was fabricated. The MOSFET exhibited a drain current density of −1.7 mA/mm. Thus far, this value is similar to the device performance of the inversion p-channel MOSFET fabricated using a phosphorus (P)-doped n-type diamond body. The N2 used for N-doping is safer than the PH3 used for P-doping; moreover, the doping concentration is highly controllable. Because the MOSFET, which is a classical electronic device, is driven by a gate voltage, smooth functioning was possible even at a deep donor level. The observed characteristics of the classic MOSFET operating via an N-doped body are crucial for the development of diamond power devices. In this paper, we discuss the significance of the N-doped diamond body and electrical characteristics of the inversion p-channel MOSFET fabricated using an N-doped diamond body.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0075964