Effect of grinding depths on SiC nanogrinding behavior based on molecular dynamics
In this paper, the nanogrinding process of single-crystal silicon carbide is studied with molecular dynamics. By changing the grinding depth, we analyze the atomic Y direction displacement, crystal defect, force, von Mises stress and the wear of abrasive. We found that with the increase in grinding...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2022, Vol.128 (1), Article 34 |
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| creator | Liu, Yingli Ji, Yanqiang Dong, Liguang Xie, Hongcai Song, Juncheng Li, Junye |
| description | In this paper, the nanogrinding process of single-crystal silicon carbide is studied with molecular dynamics. By changing the grinding depth, we analyze the atomic
Y
direction displacement, crystal defect, force, von Mises stress and the wear of abrasive. We found that with the increase in grinding depth, the atomic
Y
direction displacement, crystal defect, force and the wear of abrasive are gradually increasing. When the grinding depth is 3 nm, serious plastic deformation occurs. The deformation of the substrate extends in the
Z
direction. In addition, the maximum value of von Mises stress is fluctuating. These results provide some theoretical support for the study of mechanical properties of single-crystal silicon carbide. |
| doi_str_mv | 10.1007/s00339-021-05169-2 |
| format | Article |
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Y
direction displacement, crystal defect, force, von Mises stress and the wear of abrasive. We found that with the increase in grinding depth, the atomic
Y
direction displacement, crystal defect, force and the wear of abrasive are gradually increasing. When the grinding depth is 3 nm, serious plastic deformation occurs. The deformation of the substrate extends in the
Z
direction. In addition, the maximum value of von Mises stress is fluctuating. These results provide some theoretical support for the study of mechanical properties of single-crystal silicon carbide.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-021-05169-2</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Abrasive wear ; Applied physics ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Crystal defects ; Grinding ; Machines ; Manufacturing ; Materials science ; Mechanical properties ; Molecular dynamics ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Plastic deformation ; Processes ; Silicon carbide ; Single crystals ; Substrates ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2022, Vol.128 (1), Article 34</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-4e53d3cde71c1cbfac0d218dd9181a203646a726a1f72afdce4460bb0541fd7b3</citedby><cites>FETCH-LOGICAL-c319t-4e53d3cde71c1cbfac0d218dd9181a203646a726a1f72afdce4460bb0541fd7b3</cites><orcidid>0000-0001-9417-9897</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-021-05169-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-021-05169-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Liu, Yingli</creatorcontrib><creatorcontrib>Ji, Yanqiang</creatorcontrib><creatorcontrib>Dong, Liguang</creatorcontrib><creatorcontrib>Xie, Hongcai</creatorcontrib><creatorcontrib>Song, Juncheng</creatorcontrib><creatorcontrib>Li, Junye</creatorcontrib><title>Effect of grinding depths on SiC nanogrinding behavior based on molecular dynamics</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>In this paper, the nanogrinding process of single-crystal silicon carbide is studied with molecular dynamics. By changing the grinding depth, we analyze the atomic
Y
direction displacement, crystal defect, force, von Mises stress and the wear of abrasive. We found that with the increase in grinding depth, the atomic
Y
direction displacement, crystal defect, force and the wear of abrasive are gradually increasing. When the grinding depth is 3 nm, serious plastic deformation occurs. The deformation of the substrate extends in the
Z
direction. In addition, the maximum value of von Mises stress is fluctuating. These results provide some theoretical support for the study of mechanical properties of single-crystal silicon carbide.</description><subject>Abrasive wear</subject><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Crystal defects</subject><subject>Grinding</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Mechanical properties</subject><subject>Molecular dynamics</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Plastic deformation</subject><subject>Processes</subject><subject>Silicon carbide</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKAzEUhoMoWKsv4CrgOnpyaWaylFKtUBC8rEMml3ZKm9RkKvTtnTqiO8_mLM73_wc-hK4p3FKA6q4AcK4IMEpgQqUi7ASNqOCMgORwikagREVqruQ5uihlDf0IxkboZRaCtx1OAS9zG10bl9j5XbcqOEX82k5xNDH9nhq_Mp9tyrgxxbsjsk0bb_cbk7E7RLNtbblEZ8Fsir_62WP0_jB7m87J4vnxaXq_IJZT1RHhJ9xx63xFLbVNMBYco7VzitbUMOBSSFMxaWiomAnOeiEkNA1MBA2uavgY3Qy9u5w-9r50ep32OfYvNZOgeC1UJXuKDZTNqZTsg97ldmvyQVPQR3d6cKd7d_rbnWZ9iA-h0sNx6fNf9T-pLy4jcgM</recordid><startdate>2022</startdate><enddate>2022</enddate><creator>Liu, Yingli</creator><creator>Ji, Yanqiang</creator><creator>Dong, Liguang</creator><creator>Xie, Hongcai</creator><creator>Song, Juncheng</creator><creator>Li, Junye</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-9417-9897</orcidid></search><sort><creationdate>2022</creationdate><title>Effect of grinding depths on SiC nanogrinding behavior based on molecular dynamics</title><author>Liu, Yingli ; Ji, Yanqiang ; Dong, Liguang ; Xie, Hongcai ; Song, Juncheng ; Li, Junye</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-4e53d3cde71c1cbfac0d218dd9181a203646a726a1f72afdce4460bb0541fd7b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Abrasive wear</topic><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Crystal defects</topic><topic>Grinding</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Mechanical properties</topic><topic>Molecular dynamics</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Plastic deformation</topic><topic>Processes</topic><topic>Silicon carbide</topic><topic>Single crystals</topic><topic>Substrates</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Yingli</creatorcontrib><creatorcontrib>Ji, Yanqiang</creatorcontrib><creatorcontrib>Dong, Liguang</creatorcontrib><creatorcontrib>Xie, Hongcai</creatorcontrib><creatorcontrib>Song, Juncheng</creatorcontrib><creatorcontrib>Li, Junye</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Yingli</au><au>Ji, Yanqiang</au><au>Dong, Liguang</au><au>Xie, Hongcai</au><au>Song, Juncheng</au><au>Li, Junye</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of grinding depths on SiC nanogrinding behavior based on molecular dynamics</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2022</date><risdate>2022</risdate><volume>128</volume><issue>1</issue><artnum>34</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>In this paper, the nanogrinding process of single-crystal silicon carbide is studied with molecular dynamics. By changing the grinding depth, we analyze the atomic
Y
direction displacement, crystal defect, force, von Mises stress and the wear of abrasive. We found that with the increase in grinding depth, the atomic
Y
direction displacement, crystal defect, force and the wear of abrasive are gradually increasing. When the grinding depth is 3 nm, serious plastic deformation occurs. The deformation of the substrate extends in the
Z
direction. In addition, the maximum value of von Mises stress is fluctuating. These results provide some theoretical support for the study of mechanical properties of single-crystal silicon carbide.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-021-05169-2</doi><orcidid>https://orcid.org/0000-0001-9417-9897</orcidid></addata></record> |
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| subjects | Abrasive wear Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Crystal defects Grinding Machines Manufacturing Materials science Mechanical properties Molecular dynamics Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Plastic deformation Processes Silicon carbide Single crystals Substrates Surfaces and Interfaces Thin Films |
| title | Effect of grinding depths on SiC nanogrinding behavior based on molecular dynamics |
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