Effect of grinding depths on SiC nanogrinding behavior based on molecular dynamics

In this paper, the nanogrinding process of single-crystal silicon carbide is studied with molecular dynamics. By changing the grinding depth, we analyze the atomic Y direction displacement, crystal defect, force, von Mises stress and the wear of abrasive. We found that with the increase in grinding depth, the atomic Y direction displacement, crystal defect, force and the wear of abrasive are gradually increasing. When the grinding depth is 3 nm, serious plastic deformation occurs. The deformation of the substrate extends in the Z direction. In addition, the maximum value of von Mises stress is fluctuating. These results provide some theoretical support for the study of mechanical properties of single-crystal silicon carbide.