Formation of Metastable Phase Si(III) in Silicon Exposed to Femtosecond Laser Radiation

Silicon crystals exposed to near-IR femtosecond laser pulses have been investigated by X-ray diffraction. It is shown that a high-power laser impact on silicon with a pulse energy of 0.79 mJ leads to the formation of polycrystalline metastable phase Si-III on the surface of Si-I.

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Bibliographische Detailangaben
Veröffentlicht in:	Crystallography reports 2021-11, Vol.66 (6), p.920-922
Hauptverfasser:	Pashaev, E. M., Korchuganov, V. N., Subbotin, I. A., Likhachev, I. A., Borisov, M. M., Mareev, E. I., Potemkin, F. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystallography and Scattering Methods Crystals Femtosecond pulses High power lasers Lasers Metastable phases Near infrared radiation Physics Physics and Astronomy Real Structure of Crystals Silicon
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Beschreibung
Zusammenfassung:	Silicon crystals exposed to near-IR femtosecond laser pulses have been investigated by X-ray diffraction. It is shown that a high-power laser impact on silicon with a pulse energy of 0.79 mJ leads to the formation of polycrystalline metastable phase Si-III on the surface of Si-I.
ISSN:	1063-7745 1562-689X
DOI:	10.1134/S1063774521060249