Investigating the Field of Stable Operation of Magnetoresistive Memory Elements

A study is performed of the region of stable operation of parts of magnetoresistive storage elements, allowing for the field of the inhomogeneity of the fixing nanomagnetic strip. The coefficient of magnetostatic interaction between the sensitive and fixed layers is calculated in an approximation of...

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Veröffentlicht in:Bulletin of the Russian Academy of Sciences. Physics 2021-11, Vol.85 (11), p.1217-1221
Hauptverfasser: Polyakov, O. P., Kasatkin, S. I., Amelichev, V. V., Polyakov, P. A.
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Sprache:eng
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Zusammenfassung:A study is performed of the region of stable operation of parts of magnetoresistive storage elements, allowing for the field of the inhomogeneity of the fixing nanomagnetic strip. The coefficient of magnetostatic interaction between the sensitive and fixed layers is calculated in an approximation of a nanomagnetic strip. The optimum values of a magnetic field pulse and switching bit states are found.
ISSN:1062-8738
1934-9432
DOI:10.3103/S1062873821110307