A monolithic, back-gated diamond field-effect transistor for tunable color centers

A monolithic, back-gated diamond field-effect transistor for tunable color centers

We present an innovative design for a monolithic field effect transistor, where all components consist of the wide-bandgap material diamond. The back gate-electrode is realized by a buried, degenerately boron-doped diamond (resistivity 

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Bibliographische Detailangaben
Veröffentlicht in:Diamond and related materials 2021-11, Vol.119, p.108597, Article 108597
Hauptverfasser: Oing, D., Ney, M., Bendt, G., Schulz, S., Geller, M., Wöhrl, N., Lorke, A.
Format: Artikel
Sprache:eng
Schlagworte:
Boron doping
Color centers
Diamonds
Doped films
Field effect transistor
Field effect transistors
Nitrogen-vacancy center
P-type doping
Quantum phenomena
Semiconductor devices
Single crystal diamond
Surface electronic properties
Transistors
Two-dimensional hole gas
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Beschreibung
Zusammenfassung:We present an innovative design for a monolithic field effect transistor, where all components consist of the wide-bandgap material diamond. The back gate-electrode is realized by a buried, degenerately boron-doped diamond (resistivity 
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2021.108597