Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
We demonstrate that theoretical breakdown fields can be realized in practically dislocation free Al-rich AlGaN p-n junctions grown on AlN single crystal substrates. Furthermore, we also demonstrate a leakage current density in AlGaN that is independent of the device area, indicating a bulk leakage p...
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Veröffentlicht in: | Applied physics letters 2021-11, Vol.119 (18) |
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Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We demonstrate that theoretical breakdown fields can be realized in practically dislocation free Al-rich AlGaN p-n junctions grown on AlN single crystal substrates. Furthermore, we also demonstrate a leakage current density in AlGaN that is independent of the device area, indicating a bulk leakage phenomenon and not surface or mesa-edge related. Accordingly, we identified the Poole–Frenkel emission from two types of point-defect traps in AlGaN as the primary source of reverse leakage before breakdown. Mg-doped AlGaN exhibited leakage currents due to a shallow trap at ∼0.16 eV in contrast with leakage currents observed in Si-doped AlGaN due to a deep trap at ∼1.8 eV. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0062831 |