Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN

We demonstrate that theoretical breakdown fields can be realized in practically dislocation free Al-rich AlGaN p-n junctions grown on AlN single crystal substrates. Furthermore, we also demonstrate a leakage current density in AlGaN that is independent of the device area, indicating a bulk leakage p...

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Veröffentlicht in:Applied physics letters 2021-11, Vol.119 (18)
Hauptverfasser: Reddy, Pramod, Khachariya, Dolar, Mecouch, Will, Breckenridge, M. Hayden, Bagheri, Pegah, Guan, Yan, Kim, Ji Hyun, Pavlidis, Spyridon, Kirste, Ronny, Mita, Seiji, Kohn, Erhard, Collazo, Ramon, Sitar, Zlatko
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Sprache:eng
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Zusammenfassung:We demonstrate that theoretical breakdown fields can be realized in practically dislocation free Al-rich AlGaN p-n junctions grown on AlN single crystal substrates. Furthermore, we also demonstrate a leakage current density in AlGaN that is independent of the device area, indicating a bulk leakage phenomenon and not surface or mesa-edge related. Accordingly, we identified the Poole–Frenkel emission from two types of point-defect traps in AlGaN as the primary source of reverse leakage before breakdown. Mg-doped AlGaN exhibited leakage currents due to a shallow trap at ∼0.16 eV in contrast with leakage currents observed in Si-doped AlGaN due to a deep trap at ∼1.8 eV.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0062831