Growth, structural, optical, DFT, thermal and dielectric studies of N-Benzyl-3-nitroaniline (B3NA): a promising nonlinear optical crystal
The non-linear optical material N-Benzyl-3-nitroaniline was synthesized and grown through an aqueous solution using a low temperature solution growth technique. This conforming monoclinic crystal structure with the P2 1 space group was established by the characterization study of single crystal X-ra...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2021-11, Vol.32 (22), p.26318-26328 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The non-linear optical material N-Benzyl-3-nitroaniline was synthesized and grown through an aqueous solution using a low temperature solution growth technique. This conforming monoclinic crystal structure with the P2
1
space group was established by the characterization study of single crystal X-ray diffraction. A powder X-ray diffraction analysis was performed to confirm crystalline nature. As one of the functioning groups of nitro-aniline revealed using the Fourier transform infrared spectrum and the prominent spectral band seen at 3404 cm
−1
is caused by stretching vibrations of the N–H group. The lower cut-off wavelength of the ultra violet-visible absorption and emission spectrum was found to be about 320 nm as the excitation of fluorescence and the emission of blue and red colors are expected at 459 nm and 688 nm. To determine the difference in energy between HOMO and LUMO by 9.6258, using the B3LYP/6-311G++ (d,p) method. The time-based DFT technique was used to calculate the first-order hyperpolarization (
β
) = 1.214 × 10
–30
esu. Thermo gravimetric and differential thermal analysis measurements were used to determine the crystal’s moisturing toughness up to 282.87 °C. The relative dielectric constant changes with frequency. Kurtz Perry’s method confirmed 1.66 times the efficiency of second harmonic generation to this present crystal comparing KDP crystal. This data shows that there is a significant amount of promise that is used in optoelectronic materials. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-021-06940-0 |