Design and verification of a high performance analog switch circuit
A double-pole double-throw analog switch circuit structure with low power consumption, low on-resistance and capable of transmitting negative signals is designed in this paper, which has been developed in 0.18 μm BCD technology. The analog switch circuit is providing about 5 V high swing signal tran...
Gespeichert in:
| Veröffentlicht in: | Analog integrated circuits and signal processing 2021-12, Vol.109 (3), p.673-681 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 681 |
|---|---|
| container_issue | 3 |
| container_start_page | 673 |
| container_title | Analog integrated circuits and signal processing |
| container_volume | 109 |
| creator | Zhang, Lin Li, Jieyu Wang, Yang Hao, Jianxiu Jin, Xiangliang Peng, Yan Luo, Jun |
| description | A double-pole double-throw analog switch circuit structure with low power consumption, low on-resistance and capable of transmitting negative signals is designed in this paper, which has been developed in 0.18 μm BCD technology. The analog switch circuit is providing about 5 V high swing signal transmission for 2.7–5 V supply voltage in the temperature range of − 40 to 85 °C. The shortcomings of traditional analog switch structure are large on-resistance, large power consumption, etc. In this paper, the charge pump structure of the gate voltage bootstrap switch is designed to overcome the backgate effect, to control the turn-on and turn-off of each switching MOS transistor. A dynamic comparator structure is used to enhance the signal transmission capability, so that the analog switch can transmit negative signal. The measurement results show that under the voltage of 2.7–5 V, the overall designed circuit consumes 92 μW. The on-resistance of the analog switch is 3.9 Ω, and the leakage current is 12 nA. The analog switch has a good signal transmission and shutdown capabilities while occupying an area of 0.67 mm
2
. |
| doi_str_mv | 10.1007/s10470-020-01790-y |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2585059156</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2585059156</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-925906728bbfb42aad20728e53053ec1299823ab7ea2d7f4a4635148466851543</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKt_wFPAc3TytdkcpX5CwYueQzabbFPa3Zpslf57oyt48zAMA8_7MjwIXVK4pgDqJlMQCgiwMlRpIIcjNKNScUK10sdoBppJQoHDKTrLeQ0ATAmYocWdz7Hrse1b_OFTDNHZMQ49HgK2eBW7Fd75FIa0tb3zBbObocP5M45uhV1Mbh_Hc3QS7Cb7i989R28P96-LJ7J8eXxe3C6J41SPpHygoVKsbprQCGZty6BcXnKQ3DvKtK4Zt43ylrUqCCsqLqmoRVXVkkrB5-hq6t2l4X3v82jWwz6Vj7JhspYgNZVVodhEuTTknHwwuxS3Nh0MBfMty0yyTJFlfmSZQwnxKZQL3Hc-_VX_k_oCm-lrUg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2585059156</pqid></control><display><type>article</type><title>Design and verification of a high performance analog switch circuit</title><source>SpringerLink Journals - AutoHoldings</source><creator>Zhang, Lin ; Li, Jieyu ; Wang, Yang ; Hao, Jianxiu ; Jin, Xiangliang ; Peng, Yan ; Luo, Jun</creator><creatorcontrib>Zhang, Lin ; Li, Jieyu ; Wang, Yang ; Hao, Jianxiu ; Jin, Xiangliang ; Peng, Yan ; Luo, Jun</creatorcontrib><description>A double-pole double-throw analog switch circuit structure with low power consumption, low on-resistance and capable of transmitting negative signals is designed in this paper, which has been developed in 0.18 μm BCD technology. The analog switch circuit is providing about 5 V high swing signal transmission for 2.7–5 V supply voltage in the temperature range of − 40 to 85 °C. The shortcomings of traditional analog switch structure are large on-resistance, large power consumption, etc. In this paper, the charge pump structure of the gate voltage bootstrap switch is designed to overcome the backgate effect, to control the turn-on and turn-off of each switching MOS transistor. A dynamic comparator structure is used to enhance the signal transmission capability, so that the analog switch can transmit negative signal. The measurement results show that under the voltage of 2.7–5 V, the overall designed circuit consumes 92 μW. The on-resistance of the analog switch is 3.9 Ω, and the leakage current is 12 nA. The analog switch has a good signal transmission and shutdown capabilities while occupying an area of 0.67 mm
2
.</description><identifier>ISSN: 0925-1030</identifier><identifier>EISSN: 1573-1979</identifier><identifier>DOI: 10.1007/s10470-020-01790-y</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Analog circuits ; Charge pumps ; Circuit design ; Circuits and Systems ; Electric potential ; Electrical Engineering ; Engineering ; Leakage current ; MOS devices ; Power consumption ; Shutdowns ; Signal transmission ; Signal,Image and Speech Processing ; Transistors ; Voltage</subject><ispartof>Analog integrated circuits and signal processing, 2021-12, Vol.109 (3), p.673-681</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-925906728bbfb42aad20728e53053ec1299823ab7ea2d7f4a4635148466851543</citedby><cites>FETCH-LOGICAL-c319t-925906728bbfb42aad20728e53053ec1299823ab7ea2d7f4a4635148466851543</cites><orcidid>0000-0001-8199-4702</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10470-020-01790-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10470-020-01790-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Zhang, Lin</creatorcontrib><creatorcontrib>Li, Jieyu</creatorcontrib><creatorcontrib>Wang, Yang</creatorcontrib><creatorcontrib>Hao, Jianxiu</creatorcontrib><creatorcontrib>Jin, Xiangliang</creatorcontrib><creatorcontrib>Peng, Yan</creatorcontrib><creatorcontrib>Luo, Jun</creatorcontrib><title>Design and verification of a high performance analog switch circuit</title><title>Analog integrated circuits and signal processing</title><addtitle>Analog Integr Circ Sig Process</addtitle><description>A double-pole double-throw analog switch circuit structure with low power consumption, low on-resistance and capable of transmitting negative signals is designed in this paper, which has been developed in 0.18 μm BCD technology. The analog switch circuit is providing about 5 V high swing signal transmission for 2.7–5 V supply voltage in the temperature range of − 40 to 85 °C. The shortcomings of traditional analog switch structure are large on-resistance, large power consumption, etc. In this paper, the charge pump structure of the gate voltage bootstrap switch is designed to overcome the backgate effect, to control the turn-on and turn-off of each switching MOS transistor. A dynamic comparator structure is used to enhance the signal transmission capability, so that the analog switch can transmit negative signal. The measurement results show that under the voltage of 2.7–5 V, the overall designed circuit consumes 92 μW. The on-resistance of the analog switch is 3.9 Ω, and the leakage current is 12 nA. The analog switch has a good signal transmission and shutdown capabilities while occupying an area of 0.67 mm
2
.</description><subject>Analog circuits</subject><subject>Charge pumps</subject><subject>Circuit design</subject><subject>Circuits and Systems</subject><subject>Electric potential</subject><subject>Electrical Engineering</subject><subject>Engineering</subject><subject>Leakage current</subject><subject>MOS devices</subject><subject>Power consumption</subject><subject>Shutdowns</subject><subject>Signal transmission</subject><subject>Signal,Image and Speech Processing</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0925-1030</issn><issn>1573-1979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKt_wFPAc3TytdkcpX5CwYueQzabbFPa3Zpslf57oyt48zAMA8_7MjwIXVK4pgDqJlMQCgiwMlRpIIcjNKNScUK10sdoBppJQoHDKTrLeQ0ATAmYocWdz7Hrse1b_OFTDNHZMQ49HgK2eBW7Fd75FIa0tb3zBbObocP5M45uhV1Mbh_Hc3QS7Cb7i989R28P96-LJ7J8eXxe3C6J41SPpHygoVKsbprQCGZty6BcXnKQ3DvKtK4Zt43ylrUqCCsqLqmoRVXVkkrB5-hq6t2l4X3v82jWwz6Vj7JhspYgNZVVodhEuTTknHwwuxS3Nh0MBfMty0yyTJFlfmSZQwnxKZQL3Hc-_VX_k_oCm-lrUg</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Zhang, Lin</creator><creator>Li, Jieyu</creator><creator>Wang, Yang</creator><creator>Hao, Jianxiu</creator><creator>Jin, Xiangliang</creator><creator>Peng, Yan</creator><creator>Luo, Jun</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TG</scope><scope>8FD</scope><scope>KL.</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8199-4702</orcidid></search><sort><creationdate>20211201</creationdate><title>Design and verification of a high performance analog switch circuit</title><author>Zhang, Lin ; Li, Jieyu ; Wang, Yang ; Hao, Jianxiu ; Jin, Xiangliang ; Peng, Yan ; Luo, Jun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-925906728bbfb42aad20728e53053ec1299823ab7ea2d7f4a4635148466851543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Analog circuits</topic><topic>Charge pumps</topic><topic>Circuit design</topic><topic>Circuits and Systems</topic><topic>Electric potential</topic><topic>Electrical Engineering</topic><topic>Engineering</topic><topic>Leakage current</topic><topic>MOS devices</topic><topic>Power consumption</topic><topic>Shutdowns</topic><topic>Signal transmission</topic><topic>Signal,Image and Speech Processing</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Lin</creatorcontrib><creatorcontrib>Li, Jieyu</creatorcontrib><creatorcontrib>Wang, Yang</creatorcontrib><creatorcontrib>Hao, Jianxiu</creatorcontrib><creatorcontrib>Jin, Xiangliang</creatorcontrib><creatorcontrib>Peng, Yan</creatorcontrib><creatorcontrib>Luo, Jun</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Meteorological & Geoastrophysical Abstracts</collection><collection>Technology Research Database</collection><collection>Meteorological & Geoastrophysical Abstracts - Academic</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Analog integrated circuits and signal processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Lin</au><au>Li, Jieyu</au><au>Wang, Yang</au><au>Hao, Jianxiu</au><au>Jin, Xiangliang</au><au>Peng, Yan</au><au>Luo, Jun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and verification of a high performance analog switch circuit</atitle><jtitle>Analog integrated circuits and signal processing</jtitle><stitle>Analog Integr Circ Sig Process</stitle><date>2021-12-01</date><risdate>2021</risdate><volume>109</volume><issue>3</issue><spage>673</spage><epage>681</epage><pages>673-681</pages><issn>0925-1030</issn><eissn>1573-1979</eissn><abstract>A double-pole double-throw analog switch circuit structure with low power consumption, low on-resistance and capable of transmitting negative signals is designed in this paper, which has been developed in 0.18 μm BCD technology. The analog switch circuit is providing about 5 V high swing signal transmission for 2.7–5 V supply voltage in the temperature range of − 40 to 85 °C. The shortcomings of traditional analog switch structure are large on-resistance, large power consumption, etc. In this paper, the charge pump structure of the gate voltage bootstrap switch is designed to overcome the backgate effect, to control the turn-on and turn-off of each switching MOS transistor. A dynamic comparator structure is used to enhance the signal transmission capability, so that the analog switch can transmit negative signal. The measurement results show that under the voltage of 2.7–5 V, the overall designed circuit consumes 92 μW. The on-resistance of the analog switch is 3.9 Ω, and the leakage current is 12 nA. The analog switch has a good signal transmission and shutdown capabilities while occupying an area of 0.67 mm
2
.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10470-020-01790-y</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-8199-4702</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0925-1030 |
| ispartof | Analog integrated circuits and signal processing, 2021-12, Vol.109 (3), p.673-681 |
| issn | 0925-1030 1573-1979 |
| language | eng |
| recordid | cdi_proquest_journals_2585059156 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Analog circuits Charge pumps Circuit design Circuits and Systems Electric potential Electrical Engineering Engineering Leakage current MOS devices Power consumption Shutdowns Signal transmission Signal,Image and Speech Processing Transistors Voltage |
| title | Design and verification of a high performance analog switch circuit |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T00%3A23%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Design%20and%20verification%20of%20a%20high%20performance%20analog%20switch%20circuit&rft.jtitle=Analog%20integrated%20circuits%20and%20signal%20processing&rft.au=Zhang,%20Lin&rft.date=2021-12-01&rft.volume=109&rft.issue=3&rft.spage=673&rft.epage=681&rft.pages=673-681&rft.issn=0925-1030&rft.eissn=1573-1979&rft_id=info:doi/10.1007/s10470-020-01790-y&rft_dat=%3Cproquest_cross%3E2585059156%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2585059156&rft_id=info:pmid/&rfr_iscdi=true |