Design and verification of a high performance analog switch circuit

A double-pole double-throw analog switch circuit structure with low power consumption, low on-resistance and capable of transmitting negative signals is designed in this paper, which has been developed in 0.18 μm BCD technology. The analog switch circuit is providing about 5 V high swing signal transmission for 2.7–5 V supply voltage in the temperature range of − 40 to 85 °C. The shortcomings of traditional analog switch structure are large on-resistance, large power consumption, etc. In this paper, the charge pump structure of the gate voltage bootstrap switch is designed to overcome the backgate effect, to control the turn-on and turn-off of each switching MOS transistor. A dynamic comparator structure is used to enhance the signal transmission capability, so that the analog switch can transmit negative signal. The measurement results show that under the voltage of 2.7–5 V, the overall designed circuit consumes 92 μW. The on-resistance of the analog switch is 3.9 Ω, and the leakage current is 12 nA. The analog switch has a good signal transmission and shutdown capabilities while occupying an area of 0.67 mm 2 .