High‐Quality Bulk β‐Ga2O3 and β‐(AlxGa1−x)2O3 Crystals: Growth and Properties

A method for the growth of high‐quality gallium oxide (β‐Ga2O3) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are in...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2021-10, Vol.218 (20), p.n/a
Hauptverfasser:	Bauman, Dmitrii A., Panov, Dmitrii Iu, Zakgeim, Dmitrii A., Spiridonov, Vladislav A., Kremleva, Arina V., Petrenko, Artem A., Brunkov, Pavel N., Prasolov, Nikita D., Nashchekin, Alexey V., Smirnov, Andrei M., Odnoblyudov, Maxim A., Bougrov, Vladislav E., Romanov, Alexey E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal growth Crystal structure Czochralski method gallium oxide Gallium oxides power electronics Substrates
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Zusammenfassung:	A method for the growth of high‐quality gallium oxide (β‐Ga2O3) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are investigated. Samples of gallium oxide substrates are demonstrated. The possibility of growing bulk crystals of solid‐solution oxides (AlxGa1–x)2O3 is tested. Power electronics device performance improving is possible through the utilization of advanced materials, the most promising of which are β‐Ga2O3 and β‐(AlxGa1–x)2O3. Herein, the results of the development of technology for obtaining high‐quality β‐Ga2O3 crystals for substrates formation and further device design are presented.
ISSN:	1862-6300 1862-6319
DOI:	10.1002/pssa.202100335