Current Status of Carbon‐Related Defect Luminescence in GaN

Highly insulating layers are a prerequisite for gallium nitride (GaN)‐based power electronic devices. For this purpose, carbon doping is one of the currently pursued approaches. However, its impact on the optical and electrical properties of GaN has been widely debated in the scientific community. For further improvement of device performance, a better understanding of the role of related defects is essential. To study optically active point defects, photoluminescence is one of the most frequently used experimental characterization techniques. Herein, the main recent advances in the attribution of carbon‐related photoluminescence bands are reviewed, which were enabled by the interplay of a refinement of growth and characterization techniques and state‐of‐the‐art first‐principles calculations developed during the last decade. The predicted electronic structures of isolated carbon defects and selected carbon‐impurity complexes are compared to experimental results. Taking into account both of these, a comprehensive overview on the present state of interpretation of carbon‐related broad luminescence bands in bulk GaN is presented. Carbon doping is one of the main approaches to produce highly insulating layers required for GaN‐based power electronics. Herein, a comprehensive overview on the present state of interpretation of carbon‐related broad luminescence bands in bulk GaN is presented. For this purpose, the predicted electronic structures of isolated carbon defects and selected carbon‐impurity complexes are compared to experimental results.