Epitaxially growth of β-FeSi2 thin films on Si(100) substrates from ε-FeSi targets with ArF excimer laser deposition

We prepare high quality thin films of β-FeSi2 on silicon substrates by an ArF excimer laser deposition method (ArF-PLD) using ε-FeSi alloy targets. Preferentially [100]- oriented β-FeSi2 films were grown on Si(100) surfaces, and the interface between the films and substrates are very smooth. Based on a fact that when iron silicide films are obtained on sapphire substrates in stead of the silicon ones, the films have the same compositions as the target materials, silicon atoms in the β-FeSi2 films must be supplied from the silicon substrates.