Phonon-drag images of GaAs and AlAs quantum wells

In the presented (first) study we analyze the changes in the phonon-drag patterns of AlAs and GaAs quantum wells as a function of well thickness. Our numerical calculations include the phonon focusing, the acoustic anisotropy of the electron-phonon coupling and the conduction-band anisotropy. From s...

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Veröffentlicht in:Journal of physics. Conference series 2008-03, Vol.104 (1), p.012026
Hauptverfasser: Jasiukiewicz, C, Lehmann, D
Format: Artikel
Sprache:eng
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Zusammenfassung:In the presented (first) study we analyze the changes in the phonon-drag patterns of AlAs and GaAs quantum wells as a function of well thickness. Our numerical calculations include the phonon focusing, the acoustic anisotropy of the electron-phonon coupling and the conduction-band anisotropy. From such analysis, in connection with future systematic experimental studies, one can draw information about the electron-phonon coupling parameters and the effective mass of the electrons. A domination of electron-phonon interaction by deformation potential coupling in narrow AlAs quantum wells is shown. A comparison of our numerical results with recent phonon-drag measurements of an AlAs quantum well shows very good agreement.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/104/1/012026