High quality ultrathin NbN layers on sapphire for superconducting single photon detectors

Ultra-thin epitaxial NbN layers are a key component of Superconducting Single Photon infrared Detectors. Efforts devoted to the layer growth aim at improving their critical temperature and critical current density, while keeping their thickness close to 5 nm and Tc above 10 K, which insure a large b...

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Veröffentlicht in:Journal of physics. Conference series 2008-02, Vol.97 (1), p.012046
Hauptverfasser: Lamaestre, R Espiau de, Odier, Ph, Bellet-Amalric, E, Cavalier, P, Pouget, S, Villégier, J-C
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container_title Journal of physics. Conference series
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creator Lamaestre, R Espiau de
Odier, Ph
Bellet-Amalric, E
Cavalier, P
Pouget, S
Villégier, J-C
description Ultra-thin epitaxial NbN layers are a key component of Superconducting Single Photon infrared Detectors. Efforts devoted to the layer growth aim at improving their critical temperature and critical current density, while keeping their thickness close to 5 nm and Tc above 10 K, which insure a large bandwidth, large SNR detection at 4K. Choice of substrate is critical: for both applications, MgO wafers and R-plane sapphire are usually considered as best substrates to grown onto. However, growing NbN on M-plane orientation of sapphire wafer, 3 inch in diameter, can help improving the film quality and fabrication yield. NbN thin films were grown by reactive DC magnetron sputtering at about 600°C and passivated by an AlN layer 1.5nm thick deposited in-situ at room temperature. Growth on M-plane is shown to be better than on other sapphire orientations, including R-plane: NbN layer critical temperature reaches 13.3 K, uniform on the wafer, for a film thickness of 4.4nm measured by X-ray reflectivity. Transport properties of NbN grown on those various substrates have been correlated to their crystallographic microstructure, examined by both symmetric and asymmetric X ray diffraction. Observation of diffraction peaks has given insight on the disorientation of the NbN film.
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subjects Critical current density
Critical temperature
Crystallography
Diameters
Disorientation
Film thickness
Infrared detectors
Magnetron sputtering
Niobium nitride
Photons
Physics
Room temperature
Sapphire
Substrates
Superconductivity
Thin films
Transition temperature
Transport properties
title High quality ultrathin NbN layers on sapphire for superconducting single photon detectors
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