High quality ultrathin NbN layers on sapphire for superconducting single photon detectors
Ultra-thin epitaxial NbN layers are a key component of Superconducting Single Photon infrared Detectors. Efforts devoted to the layer growth aim at improving their critical temperature and critical current density, while keeping their thickness close to 5 nm and Tc above 10 K, which insure a large b...
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Veröffentlicht in: | Journal of physics. Conference series 2008-02, Vol.97 (1), p.012046 |
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Zusammenfassung: | Ultra-thin epitaxial NbN layers are a key component of Superconducting Single Photon infrared Detectors. Efforts devoted to the layer growth aim at improving their critical temperature and critical current density, while keeping their thickness close to 5 nm and Tc above 10 K, which insure a large bandwidth, large SNR detection at 4K. Choice of substrate is critical: for both applications, MgO wafers and R-plane sapphire are usually considered as best substrates to grown onto. However, growing NbN on M-plane orientation of sapphire wafer, 3 inch in diameter, can help improving the film quality and fabrication yield. NbN thin films were grown by reactive DC magnetron sputtering at about 600°C and passivated by an AlN layer 1.5nm thick deposited in-situ at room temperature. Growth on M-plane is shown to be better than on other sapphire orientations, including R-plane: NbN layer critical temperature reaches 13.3 K, uniform on the wafer, for a film thickness of 4.4nm measured by X-ray reflectivity. Transport properties of NbN grown on those various substrates have been correlated to their crystallographic microstructure, examined by both symmetric and asymmetric X ray diffraction. Observation of diffraction peaks has given insight on the disorientation of the NbN film. |
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ISSN: | 1742-6596 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/97/1/012046 |