In situ monitoring of plasma etch processes with a quantum cascade laser arrangement in semiconductor industrial environment

Concentrations of the etch product SiF4 were measured online and in situ in technological etch plasmas with an especially designed quantum cascade laser arrangement for application in semiconductor industrial environment, the Q-MACS Etch. The combination of quantum cascade lasers and infra red absor...

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Veröffentlicht in:Journal of physics. Conference series 2009-03, Vol.157 (1), p.012007
Hauptverfasser: Lang, N, Röpcke, J, Zimmermann, H, Steinbach, A, Wege, S
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Sprache:eng
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Zusammenfassung:Concentrations of the etch product SiF4 were measured online and in situ in technological etch plasmas with an especially designed quantum cascade laser arrangement for application in semiconductor industrial environment, the Q-MACS Etch. The combination of quantum cascade lasers and infra red absorption spectroscopy (QCLAS) opens up new attractive possibilities for plasma process monitoring and control. With the realization of a specific interface the Q-MACS Etch system is synchronized to the etch process and allows therefore automated measurements, which is important in a high volume production environment.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/157/1/012007