X-ray photoelectron study of Si+ ion implanted polymers
X-ray photoelectron spectroscopy was used to characterize different polymer materials implanted with low energy Si+ ions (E=30 keV, D= 1.1017 cm−2). Two kinds of polymers were studied – ultra-high-molecular-weight poly-ethylene (UHMWPE), and poly-methyl-methacrylate (PMMA). The non-implanted polymer...
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| Veröffentlicht in: | Journal of physics. Conference series 2010-11, Vol.253 (1), p.012070 |
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| creator | Tsvetkova, T Balabanov, S Bischoff, L Krastev, V Stefanov, P Avramova, I |
| description | X-ray photoelectron spectroscopy was used to characterize different polymer materials implanted with low energy Si+ ions (E=30 keV, D= 1.1017 cm−2). Two kinds of polymers were studied – ultra-high-molecular-weight poly-ethylene (UHMWPE), and poly-methyl-methacrylate (PMMA). The non-implanted polymer materials show the expected variety of chemical bonds: carbon-carbon, carbon being three- and fourfold coordinated, and carbon-oxygen in the case of PMMA samples. The X-ray photoelectron and Raman spectra show that Si+ ion implantation leads to the introduction of additional disorder in the polymer material. The X-ray photoelectron spectra of the implanted polymers show that, in addition to already mentioned bonds, silicon creates new bonds with the host elements – Si-C and Si-O, together with additional Si dangling bonds as revealed by the valence band study of the implanted polymer materials. |
| doi_str_mv | 10.1088/1742-6596/253/1/012070 |
| format | Article |
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Two kinds of polymers were studied – ultra-high-molecular-weight poly-ethylene (UHMWPE), and poly-methyl-methacrylate (PMMA). The non-implanted polymer materials show the expected variety of chemical bonds: carbon-carbon, carbon being three- and fourfold coordinated, and carbon-oxygen in the case of PMMA samples. The X-ray photoelectron and Raman spectra show that Si+ ion implantation leads to the introduction of additional disorder in the polymer material. The X-ray photoelectron spectra of the implanted polymers show that, in addition to already mentioned bonds, silicon creates new bonds with the host elements – Si-C and Si-O, together with additional Si dangling bonds as revealed by the valence band study of the implanted polymer materials.</description><identifier>ISSN: 1742-6596</identifier><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/253/1/012070</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Addition polymerization ; Carbon ; Chemical bonds ; Ion implantation ; Photoelectrons ; Physics ; Polyethylenes ; Polymers ; Polymethyl methacrylate ; Raman spectra ; Silicon ; Spectrum analysis ; Valence band ; X ray spectra</subject><ispartof>Journal of physics. 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The X-ray photoelectron spectra of the implanted polymers show that, in addition to already mentioned bonds, silicon creates new bonds with the host elements – Si-C and Si-O, together with additional Si dangling bonds as revealed by the valence band study of the implanted polymer materials.</description><subject>Addition polymerization</subject><subject>Carbon</subject><subject>Chemical bonds</subject><subject>Ion implantation</subject><subject>Photoelectrons</subject><subject>Physics</subject><subject>Polyethylenes</subject><subject>Polymers</subject><subject>Polymethyl methacrylate</subject><subject>Raman spectra</subject><subject>Silicon</subject><subject>Spectrum analysis</subject><subject>Valence band</subject><subject>X ray spectra</subject><issn>1742-6596</issn><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kEtLAzEQgIMoWKt_QRY8yrp5P45SfEHBgwreQrpJcMu2icn2sP_elBX1UAyEDJPvm2EGgEsEbxCUskGC4pozxRvMSIMaiDAU8AjMfj6O_8Sn4CznNYSkHDED4r1OZqziRxiC6107pLCt8rCzYxV89dJdV11JdJvYm-3gbBVDP25cyufgxJs-u4vvdw7e7u9eF4_18vnhaXG7rFuK0FB7IrnFxqKWy1ZBLi1biRWFhntqvGTlSk8Q4kJhaan12OMVYaKllJuikjm4murGFD53Lg96HXZpW1pqzCSESimmCsUnqk0h5-S8jqnbmDRqBPV-SXo_v97PXzSikZ6WVMR6ErsQf52DrI7WFx4d4P_v8QWzVnUN</recordid><startdate>20101101</startdate><enddate>20101101</enddate><creator>Tsvetkova, T</creator><creator>Balabanov, S</creator><creator>Bischoff, L</creator><creator>Krastev, V</creator><creator>Stefanov, P</creator><creator>Avramova, I</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20101101</creationdate><title>X-ray photoelectron study of Si+ ion implanted polymers</title><author>Tsvetkova, T ; Balabanov, S ; Bischoff, L ; Krastev, V ; Stefanov, P ; Avramova, I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c411t-f386d2ad1c68c9068d5b7b40a6f4af85af88f31167928d4df2f2b357c446a86d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Addition polymerization</topic><topic>Carbon</topic><topic>Chemical bonds</topic><topic>Ion implantation</topic><topic>Photoelectrons</topic><topic>Physics</topic><topic>Polyethylenes</topic><topic>Polymers</topic><topic>Polymethyl methacrylate</topic><topic>Raman spectra</topic><topic>Silicon</topic><topic>Spectrum analysis</topic><topic>Valence band</topic><topic>X ray spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsvetkova, T</creatorcontrib><creatorcontrib>Balabanov, S</creatorcontrib><creatorcontrib>Bischoff, L</creatorcontrib><creatorcontrib>Krastev, V</creatorcontrib><creatorcontrib>Stefanov, P</creatorcontrib><creatorcontrib>Avramova, I</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Journal of physics. Conference series</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsvetkova, T</au><au>Balabanov, S</au><au>Bischoff, L</au><au>Krastev, V</au><au>Stefanov, P</au><au>Avramova, I</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X-ray photoelectron study of Si+ ion implanted polymers</atitle><jtitle>Journal of physics. Conference series</jtitle><date>2010-11-01</date><risdate>2010</risdate><volume>253</volume><issue>1</issue><spage>012070</spage><pages>012070-</pages><issn>1742-6596</issn><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>X-ray photoelectron spectroscopy was used to characterize different polymer materials implanted with low energy Si+ ions (E=30 keV, D= 1.1017 cm−2). Two kinds of polymers were studied – ultra-high-molecular-weight poly-ethylene (UHMWPE), and poly-methyl-methacrylate (PMMA). 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| subjects | Addition polymerization Carbon Chemical bonds Ion implantation Photoelectrons Physics Polyethylenes Polymers Polymethyl methacrylate Raman spectra Silicon Spectrum analysis Valence band X ray spectra |
| title | X-ray photoelectron study of Si+ ion implanted polymers |
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