Toward atom probe tomography of microelectronic devices

Atom probe tomography and scanning transmission electron microscopy has been used to analyze a commercial microelectronics device prepared by depackaging and focused ion beam milling. Chemical and morphological data are presented from the source, drain and channel regions, and part of the gate oxide...

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Veröffentlicht in:	Journal of physics. Conference series 2011-11, Vol.326 (1), p.012030-4
Hauptverfasser:	Larson, D J, Lawrence, D, Lefebvre, W, Olson, D, Prosa, T J, Reinhard, D A, Ulfig, R M, Clifton, P H, Bunton, J H, Lenz, D, Olson, J D, Renaud, L, Martin, I, Kelly, T F
Format:	Artikel
Sprache:	eng
Schlagworte:	Atom probe analysis Channels Devices Drains Electrons Ion beams Microelectronics Oxides Physics Scanning transmission electron microscopy Tomography
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Beschreibung
Zusammenfassung:	Atom probe tomography and scanning transmission electron microscopy has been used to analyze a commercial microelectronics device prepared by depackaging and focused ion beam milling. Chemical and morphological data are presented from the source, drain and channel regions, and part of the gate oxide region of an Intel® i5-650 p-FET device demonstrating feasibility in using these techniques to investigate commercial chips.
ISSN:	1742-6596 1742-6588 1742-6596
DOI:	10.1088/1742-6596/326/1/012030