Nano-field mapping for the semiconductor industry

There is a need to measure the dopant potentials and strain fields in semiconductor materials with nm-scale resolution. Here we show that off-axis electron holography is a powerful technique that can be used to measure the fields present in a high-k metal gate 28-nm node nMOS device with a contact e...

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Veröffentlicht in:	Journal of physics. Conference series 2011-11, Vol.326 (1), p.012054-4
Hauptverfasser:	Cooper, D, Béché, A, Servanton, G, Pantel, R, Morin, P, Rouviere, J -L
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact Contact stresses Dopants Electron diffraction Electron energy loss spectroscopy Energy dissipation Holography MOS devices Nanostructure Physics Plugs Semiconductor materials Semiconductors Spatial resolution Strain
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